View TPCP8003-H_4127259.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TPCP8003-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCP8003-H
High Efficiency DCDC Converter Applications Notebook PC Applications Portable Equipment Applications
* * * * * * * Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 7.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 m (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 100V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1mA)
S
Unit: mm
0.330.05 0.05 M A
8 5
2.40.1 0.475
1 4
0.65 2.90.1
B A
0.05 M B
0.80.05 0.025
S
0.170.02
0.28 +0.1 -0.11
+0.13
1.12 -0.12 1.12 +0.13 -0.12
Absolute Maximum Ratings (Ta = 25C)
1Source 5Drain 6Drain 7Drain 8Drain
0.28 +0.1 -0.11
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR
Rating 100 100 20 2.2 8.8 1.68
Unit V V V A
2Source 3Source 4Gate
JEDEC JEITA TOSHIBA
2-3V1K
Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b)
Drain power dissipation
Weight: 0.017 g (typ.)
W
Circuit Configuration
8 7 6 5
Drain power dissipation
0.84
W
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25) (Note 4) Channel temperature Storage temperature range
3.93 2.2 0.016 150 -55 to 150
mJ A mJ C C
EAR Tch Tstg
1 8
2 7
3 6
4 5
Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care.
8003H
1 2 3 4
Lot No.
1
2007-06-22
2.80.1
TPCP8003-H
Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 74.4 Unit C/W
Thermal resistance, channel to ambient (t = 5 s) (Note 2b)
Rth (ch-a)
148.8
C/W
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 1 mH, RG = 1 , IAR = 2.2A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
2
2007-06-22
TPCP8003-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 80 V, VGS = 10 V, ID = 2.2 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 1.1 A VGS = 10 V, ID = 1.1 A VDS = 10 V, ID = 1.1 A Min 100 60 1.1 2.7 ID = 1.1 A VOUT RL = 45.5 Typ. 140 130 5.4 360 22 75 7 14 3 17 7.5 4.5 1.6 1.3 2.0 Max 10 10 2.3 190 180 ns nC pF Unit A A V V m S
VDD 50 V - < 1%, tw = 10 s Duty = VDD 80 V, VGS = 10 V, ID = 2.2 A - VDD 80 V, VGS = 5 V, ID = 2.2 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 2.2 A, VGS = 0 V Min Typ. Max 8.8 -1.2 Unit A V
3
2007-06-22
TPCP8003-H
ID - VDS
4 Common source Ta = 25C Pulse test 8 6 5 4.5 3.75 10 3.5 8 3.25 6 8 5 4.5
ID - VDS
3.5 3.75 Common source Ta = 25C Pulse test 3.25
(A)
3
(A)
3
6
10
ID
Drain current
2
Drain current
ID
4
3
2.75 1 VGS = 2.5 V 0 0
2
2.75 VGS = 2.5 V
0.2
0.4
0.6
0.8
1
0
0
1
2
3
4
5
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
8 Common source VDS = -10 V Pulse test 1
VDS - VGS
Common source Ta = 25C Pulse test
(V) VDS Drain-source voltage
100
0.8
(A) ID
6
0.6
Drain current
4
0.4 ID = 2.2 A 0.2 1.1 0.5 0 0 2 4 6 8 10 12
2 25
Ta = -55C
0
0
1
2
3
4
5
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID (S)
100 Common source VDS = 10 V Pulse test 25 10 Ta = -55C 100 1000 Common source Ta = 25C Pulse test
RDS (ON) - ID
|Yfs|
Forward transfer admittance
Drain-source ON-resistance RDS (ON) (m)
VGS = 4.5 V 100 10
1
0.1 0.1
1
10
10 0.1
1
10
Drain current
ID
(A)
Drain current
ID
(A)
4
2007-06-22
TPCP8003-H
RDS (ON) - Ta
300
IDR - VDS
10 Common source Ta = 25C Pulse test
Drain-source ON-resistance RDS (ON) (m)
250 ID = 2.2A 200 1.1A ID = 2.2A 1.1A 150 VGS = 4.5 V 100 10 V
IDR
(A)
Common source Pulse test
10 5 1
3
Drain reverse current
1
0
VGS = -1V
50 -80
-40
0
40
80
120
160
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
1000 Ciss 3
Vth - Ta Vth (V) Gate threshold voltage
2.5
(pF)
100 Coss
2
Capacitance
C
1.5
10 Common source VGS = 0 V f = 1 MHz Ta = 25C 1 10
Crss
1 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
0.5
1 0.1
100
0 -80
Drain-source voltage
VDS
(V)
Ambient temperature
Ta
(C)
PD - Ta
2
Dynamic input/output characteristics
140 Common source I = 2.2 A 120 D Ta = 25C Pulse test 100 80 60 40 40 20 VDD = 80 V VDS 40 VDD = 80 V 6 4 2 0 14 12 10 8
(V)
PD
1.6
VDS
20
Drain power dissipation
Drain-source voltage
(2) 0.8
VGS
0.4
20 0 0
0
0
40
80
120
160
1
2
3
4
5
6
7
8
9
Ambient temperature
Ta
(C)
Total gate charge
Qg
(nC)
5
2007-06-22
Gate-source voltage
1.2
VGS
(V)
(1)
(1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) 5s
(W)
TPCP8003-H
rth - tw
1000 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100
Transient thermal impedance rth (C/W)
10
1
Single - pulse 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
100
(A)
10
ID max (Pulse) * t = 1 ms* t = 10 ms*
Drain current
ID
1
0.1
* Single - pulse Ta = 25C Curves must be derated linearly with increase in temperature.
0.01 1
VDSS max 100 1000
10
Drain-source voltage
VDS
(V)
6
2007-06-22
TPCP8003-H
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
7
2007-06-22

▲Up To Search▲

Price & Availability of TPCP8003-H

	To Download TPCP8003-H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .